P-Channel 40-V (D-S), MOSFET PRODUCT SUMMARY rDS(on) 0.0094

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

P-Channel 40-V (D-S), MOSFET PRODUCT SUMMARY rDS(on) 0.0094

Datasheet Thumbnail

Top Searches for this datasheet

SUD50P04-09L
P-Channel 40-V (D-S), MOSFET
PRODUCT SUMMARY
rDS(on) 0.0094 0.0145 (A)d
FEATURES
TrenchFET® Power MOSFETS Junction Temperature
Available
RoHS*
COMPLIANT
TO-252
Drain Connected
View Ordering Information: SUD50P04-09L SUD50P04-09L (Lead (Pb)-free) P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Single Avalanche Energya Power Dissipation Operating Junction Storage Temperature Range Symbol Tstg Limit 136c Unit
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient Junction-to-Case Notes: Duty cycle When Mounted square (FR-4 material). curve voltage derating. Package limited. containing terminations RoHS compliant, exemptions apply. Document Number: 72243 S-71660-Rev. 06-Aug-07 www.vishay.com
Symbol Steady State RthJA RthJC
Typical 0.82
Maximum
Unit °C/W
SUD50P04-09L
SPECIFICATIONS unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS, Drain-Source On-State Resistancea rDS(on) Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Charge Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time
Symbol
Test Conditions
Unit
0.0075 0.0094 0.014 0.017 0.0115 4800 0.0145
Ciss Coss Crss td(on) td(off)
18.5
VGEN °C)b
Source-Drain Diode Ratings Characteristics
di/dt A/µs
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing. Independent operating temperature.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
www.vishay.com
Document Number: 72243 S-71660-Rev. 06-Aug-07
SUD50P04-09L
TYPICAL CHARACTERISTICS unless noted
thru Drain Current Drain Current
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
Transconductance DS(on)- On-Resistance 0.016 0.020
Transfer Characteristics
0.012
0.008
0.004
0.000
Gate-to-Source Voltage
Drain Current
Transconductance
8000 7000 Gate-to-Source Voltage 6000 5000 4000 3000 2000 1000 Crss Coss Ciss
On-Resistance Drain Current
Capacitance (pF)
Drain-to-Source Voltage
Total Gate Charge (nC)
Capacitance Document Number: 72243 S-71660-Rev. 06-Aug-07
Gate Charge www.vishay.com
SUD50P04-09L
TYPICAL CHARACTERISTICS unless noted
Source Current
DS(on) On-Resistance (Normalized)
Junction Temperature (°C) Source-to-Drain Voltage
On-Resistance Junction Temperature
Source-Drain Diode Forward Voltage
1000
THERMAL RATINGS
rDS(on) Limited Drain Current Drain Current
Limited
P(t) 0.0001
ID(on) Limited Single Pulse BVDSS Limited Drain-to-Source Voltage
P(t) 0.001 P(t) 0.01 P(t) P(t)
Case Temperature (°C)
Maximum Avalanche Drain Current Case Temperature
Duty Cycle Normalized Effective Transient Thermal Impedance
Safe Operating Area
0.05
0.02 Single Pulse 0.01 Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
www.vishay.com
Document Number: 72243 S-71660-Rev. 06-Aug-07
Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
www.vishay.com

P-Channel 40-V (D-S), MOSFET PRODUCT SUMMARY rDS(on) 0.0094

Top Searches for this datasheet

Other recent searches