N-Channel 30-V (D-S) MOSFET rDS(on) 0.0045 0.0055 Trenc

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N-Channel 30-V (D-S) MOSFET rDS(on) 0.0045 0.0055 Trenc

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Si7856DP
N-Channel 30-V (D-S) MOSFET
rDS(on)
0.0045 0.0055
TrenchFETr Power MOSFET Optimized "Low Side" Synchronous Rectifier Operation Thermal Resistance PowerPAKr Package with 1.07-mm Profile 100% Tested
APPLICATIONS
DC/DC Converters Synchronous Rectifiers
PowerPAK SO-8
6.15
5.15
N-Channel MOSFET
Bottom View Ordering Information: Si7856DP-T1
ABSOLUTE MAXIMUM RATINGS 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150_C)a Pulsed Drain Current Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range 25_C 70_C 25_C 70_C
Symbol
secs
Steady State
Unit
Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes Surface Mounted Board. Document Number: 71850 S-31727-Rev. 18-Aug-03 www.vishay.com Steady State Steady State RthJA RthJC
Symbol
Typical
Maximum
Unit
_C/W
Si7856DP
SPECIFICATIONS 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) VGS, 55_C 0.0035 0.0043 0.72 0.0045 0.0055 1.95 "100
Symbol
Test Condition
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) td(off) di/dt A/ms VGEN
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
thru
Transfer Characteristics
Drain Current
Drain Current
125_C 25_C -55_C
Drain-to-Source Voltage
Gate-to-Source Voltage
www.vishay.com
Document Number: 71850 S-31727-Rev. 18-Aug-03
Si7856DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance Drain Current
0.010 7000 Ciss DS(on) On-Resistance 0.008 Capacitance (pF) 5600
Capacitance
0.006 0.004 0.002
4200
2800
1400 Crss
Coss
0.000
Drain Current
Drain-to-Source Voltage
Gate Charge
Gate-to-Source Voltage
On-Resistance Junction Temperature
DS(on) On-Resistance (Normalized)
Total Gate Charge (nC)
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
0.020
On-Resistance Gate-to-Source Voltage
150_C
DS(on) On-Resistance
0.016 0.012
Source Current
0.008
25_C
0.004
0.00
0.000
Source-to-Drain Voltage
Gate-to-Source Voltage
Document Number: 71850 S-31727-Rev. 18-Aug-03
www.vishay.com
Si7856DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
-0.0 -0.2 -0.4 -0.6 -0.8 Power GS(th) Variance
Single Pulse Power
0.001
0.01
Time (sec)
Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05 0.02
Duty Cycle,
Unit Base RthJA 50_C/W
Single Pulse 0.01 Square Wave Pulse Duration (sec)
PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient Thermal Impedance Duty Cycle
Single Pulse 0.05 0.02
0.01 Square Wave Pulse Duration (sec)
www.vishay.com
Document Number: 71850 S-31727-Rev. 18-Aug-03
Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
www.vishay.com

N-Channel 30-V (D-S) MOSFET rDS(on) 0.0045 0.0055 Trenc

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