N-Channel 80-V (D-S) MOSFET RDS(on) 0.0165 0.022 12.5 10.9 F

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N-Channel 80-V (D-S) MOSFET RDS(on) 0.0165 0.022 12.5 10.9 F

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Si7852DP
N-Channel 80-V (D-S) MOSFET
RDS(on) 0.0165 0.022 12.5 10.9
FEATURES
Halogen-free According 61249-2-21 Available TrenchFET® Power MOSFETS Thermal Resistance PowerPAK® Package with 1.07 Profile Optimized Fast Switching Tested
PowerPAK SO-8
APPLICATIONS
Primary Side Switch DC/DC Applications
6.15
5.15
Bottom View Ordering Information: Si7852DP-T1-E3 (Lead (Pb)-free) Si7852DP-T1-GE3 (Lead (Pb)-free Halogen-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current °C)a Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature)
Symbol Tstg
Steady State
Unit
12.5 10.0
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State Symbol RthJA RthJC Typical Maximum °C/W Unit
Notes: Surface Mounted board. Solder Profile (www.vishay.com/ppg?73257). PowerPAK SO-8 leadless package. lead terminal exposed copper (not plated) result singulation process manufacturing. solder fillet exposed copper cannot guaranteed required ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with soldering iron recommended leadless components.
Document Number: 71627 S09-0268-Rev. 16-Feb-09
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Si7852DP
SPECIFICATIONS unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) td(off) dI/dt A/µs VGEN 11.0
Symbol VGS(th) IGSS IDSS ID(on) RDS(on)
Test Conditions VGS,
Min.
Typ.
Max.
Unit
0.0135 0.0175 0.75 0.0165 0.022
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
TYPICAL CHARACTERISTICS unless otherwise noted
thru Drain Current Drain Current
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
Transfer Characteristics
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Document Number: 71627 S09-0268-Rev. 16-Feb-09
Si7852DP
TYPICAL CHARACTERISTICS
0.04
unless otherwise noted
3000
2500 Capacitance (pF) 0.03
2000
Ciss
0.02 DS(on)
1500
1000 Crss Coss
0.01
0.00
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current
Gate-to-Source Voltage RDS(on) On-Resistance (Normalized)
Capacitance
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge
0.08
On-Resistance Junction Temperature
Source Current
0.06
DS(on)
0.04
0.02
0.01
0.00 Source-to-Drain Voltage Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
On-Resistance Gate-to-Source Voltage
Document Number: 71627 S09-0268-Rev. 16-Feb-09
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Si7852DP
TYPICAL CHARACTERISTICS unless otherwise noted
VGS(th) Variance
Time
Temperature (°C)
Threshold Voltage
Avalanche Current Time
Power
0.001 0.01 Time
Single Pulse Power, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05
0.02
Duty Cycle,
Unit Base thJA °C/W
Single Pulse 0.01 Square Wave Pulse Duration
PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 71627 S09-0268-Rev. 16-Feb-09
Si7852DP
TYPICAL CHARACTERISTICS unless otherwise noted
Normalized Effective Transient Thermal Impedance Duty Cycle
0.05 0.02 Single Pulse 0.01 Square Wave Pulse Duration
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data, www.vishay.com/ppg?71627.
Document Number: 71627 S09-0268-Rev. 16-Feb-09
www.vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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N-Channel 80-V (D-S) MOSFET RDS(on) 0.0165 0.022 12.5 10.9 F

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