N-Channel 60-V (D-S) Fast Switching MOSFET RDS(on) 0.022 0.031 10

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N-Channel 60-V (D-S) Fast Switching MOSFET RDS(on) 0.022 0.031 10

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Si7850DP
N-Channel 60-V (D-S) Fast Switching MOSFET
RDS(on) 0.022 0.031 10.3
FEATURES
Halogen-free According 61249-2-21 Available TrenchFET® Power MOSFETs Thermal Resistance PowerPAK® Package with 1.07 Profile Optimized Fast Switching Tested
PowerPAK SO-8
APPLICATIONS
6.15
5.15
Primary Side Switch DC/DC Applications Secondary Synchronous Rectifier
Bottom View Ordering Information: Si7850DP-T1-E3 (Lead (Pb)-free) Si7850DP-T1-GE3 (Lead (Pb)-free Halogen-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current °C)a Continuous Source Current Pulsed Drain Current Avalanche Currentb Single Avalanche Energyb Maximum Power Dissipation
Symbol Tstg
10.3
Operating Junction Storage Temperature Range
Steady State
Unit
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State Symbol RthJA RthJC Typical Maximum Unit °C/W
Notes: Surface Mounted board. Guaranteed design, subject production testing.
Document Number: 71625 S09-0227-Rev. 09-Feb-09
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Si7850DP
SPECIFICATIONS unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) td(off) dI/dt A/µs VGEN 10.3
Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on)
Test Condition VGS, 10.3 10.3
Min.
Typ.
Max.
Unit
0.018 0.025 0.85 0.022 0.031
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
TYPICAL CHARACTERISTICS unless otherwise noted
thru Drain Current Drain Current
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics www.vishay.com
Transfer Characteristics Document Number: 71625 S09-0227-Rev. 09-Feb-09
Si7850DP
TYPICAL CHARACTERISTICS unless otherwise noted
0.06 1400 1200 Capacitance (pF) 1000 Crss Coss Ciss
0.05 On-Resistance
0.04 0.03
DS(on)
0.01
0.00
0.02
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current
Gate-to-Source Voltage 10.3 DS(on) On-Resistance (Normalized) 10.3
Capacitance
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge
0.06
On-Resistance Junction Temperature
0.05 Source Current On-Resistance
0.04 10.3 0.03
DS(on) 0.00
0.02
0.01
0.00
Source-to-Drain Voltage
Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
On-Resistance Gate-to-Source Voltage
Document Number: 71625 S09-0227-Rev. 09-Feb-09
www.vishay.com
Si7850DP
TYPICAL CHARACTERISTICS unless otherwise noted
0.01 Time Power Temperature (°C)
GS(th) Variance
Threshold Voltage
Duty Cycle
Single Pulse Power
Normalized Effective Transient Thermal Impedance
Notes:
0.05
0.02
Duty Cycle,
Unit Base thJA °C/W PDMZthJA(t) Surface Mounted
Single Pulse 0.01 Square Wave Pulse Duration
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle
Normalized Effective Transient Thermal Impedance
0.05 0.02 Single Pulse 0.01 Square Wave Pulse Duration
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data, www.vishay.com/ppg?71625.
www.vishay.com
Document Number: 71625 S09-0227-Rev. 09-Feb-09
Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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N-Channel 60-V (D-S) Fast Switching MOSFET RDS(on) 0.022 0.031 10

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