N-Channel 30-V (D-S) Fast Switching MOSFET FEATURES rDS(on)

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N-Channel 30-V (D-S) Fast Switching MOSFET FEATURES rDS(on)

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Si7840DP
N-Channel 30-V (D-S) Fast Switching MOSFET
FEATURES
rDS(on)
0.0095 0.014
TrenchFETr Power MOSFET Thermal Resistance PowerPAKr Package with 1.07-mm Profile 100% Tested
APPLICATIONS
DC/DC Converters Optimized "High-Side" Synchronous Rectifier Operation
PowerPAK SO-8
6.15
5.15
N-Channel MOSFET Bottom View
Ordering Information: Si7840DP-T1
ABSOLUTE MAXIMUM RATINGS 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction Storage Temperature Range 25_C 70_C 25_C 70_C
Symbol
secs
Steady State
Unit
Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes Surface Mounted Board. Document Number: 71624 S-31728-Rev. 18-Aug-03 www.vishay.com Steady State Steady State RthJA RthJC
Symbol
Typical
Maximum
Unit
_C/W
Si7840DP
MOSFET SPECIFICATIONS 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentNO Drain-Source On-State ResistanceNO Forward TransconductanceNO Diode Forward VoltageNO VGS(th) IGSS IDSS ID(on) rDS(on) VGS, 55_C 0.0077 0.0115 0.75 0.0095 0.014 "100
Symbol
Test Condition
Unit
DynamicNO
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) td(off) di/dt A/ms VGEN 15.5
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
thru Drain Current Drain Current
Transfer Characteristics
125_C 25_C -55_C
Drain-to-Source Voltage
Gate-to-Source Voltage
www.vishay.com
Document Number: 71624 S-31728-Rev. 18-Aug-03
Si7840DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance Drain Current
0.020 2500
Capacitance
DS(on) On-Resistance
0.016 Capacitance (pF) 0.012 0.008
2000 Ciss 1500
1000
Coss
0.004
Crss
0.000
Drain Current
Drain-to-Source Voltage
Gate Charge
Gate-to-Source Voltage
On-Resistance Junction Temperature
DS(on) On-Resistance (Normalized)
Total Gate Charge (nC)
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
0.05 0.04
On-Resistance Gate-to-Source Voltage
DS(on) On-Resistance
Source Current
150_C
0.03
0.02
25_C
0.01
0.00
Source-to-Drain Voltage
Gate-to-Source Voltage
Document Number: 71624 S-31728-Rev. 18-Aug-03
www.vishay.com
Si7840DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
-0.0 Power -0.2 -0.4 -0.6 -0.8 -1.0 0.001 0.01 Time (sec) Temperature (_C) GS(th) Variance
Single Pulse Power, Juncion-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05 0.02
Duty Cycle,
Unit Base RthJA 68_C/W
Single Pulse 0.01 Square Wave Pulse Duration (sec)
PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient Thermal Impedance Duty Cycle
0.05 0.02 Single Pulse
0.01 Square Wave Pulse Duration (sec)
www.vishay.com
Document Number: 71624 S-31728-Rev. 18-Aug-03
Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
www.vishay.com

N-Channel 30-V (D-S) Fast Switching MOSFET FEATURES rDS(on)

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