N-Channel 40-V (D-S) MOSFET rDS(on) 0.009 0.012 FEATURES

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N-Channel 40-V (D-S) MOSFET rDS(on) 0.009 0.012 FEATURES

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Si7848DP
N-Channel 40-V (D-S) MOSFET
rDS(on) 0.009 0.012
FEATURES
TrenchFET® Power MOSFETS Thermal Resistance PowerPAK® Package with 1.07-mm Profile Optimized Fast Switching Tested
Pb-free Available
RoHS*
COMPLIANT
PowerPAK SO-8
APPLICATIONS
DC/DC Converters Synchronous Buck Synchronous Rectifier
6.15
5.15
Bottom View Ordering Information: Si7848DP-T1 Si7848DP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current °C)a Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c Symbol Tstg secs Steady State 10.4 1.67 1.83 Unit
13.7
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State Symbol RthJA RthJC Typical Maximum Unit °C/W
Notes Surface Mounted Board. Solder Profile PowerPAK SO-8 leadless package. lead terminal exposed copper (not plated) result singulation process manufacturing. solder fillet exposed copper cannot guaranteed required ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with soldering iron recommended leadless components. containing terminations RoHS compliant, exemptions apply. Document Number: 71450 S-52554-Rev. 19-Dec-05 www.vishay.com
Si7848DP
SPECIFICATIONS unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) td(off) di/dt A/µs VGEN 18.5 VGS(th) IGSS IDSS ID(on) rDS(on) VGS, 0.0075 0.0095 0.75 0.009 0.012 Symbol Test Condition Unit
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
TYPICAL CHARACTERISTICS unless noted
thru Drain Current Drain Current
thru
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
Transfer Characteristics
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Document Number: 71450 S-52554-Rev. 19-Dec-05
Si7848DP
TYPICAL CHARACTERISTICS
0.020 DS(on) On-Resistance
unless noted
3000
Capacitance (pF)
0.016
2500 Ciss 2000
0.012 0.008
1500
1000 Coss Crss
0.004
0.000
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current
Gate-to-Source Voltage DS(on) On-Resistance (Normalized)
Capacitance
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge
0.04 Source Current
On-Resistance Junction Temperature
DS(on) On-Resistance
0.03
0.02
0.01
0.00 Source-to-Drain Voltage Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
On-Resistance Gate-to-Source Voltage
Document Number: 71450 S-52554-Rev. 19-Dec-05
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Si7848DP
TYPICAL CHARACTERISTICS unless noted
GS(th) Variance 0.001 Power
0.01
Temperature (°C)
Time (sec)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05
0.02
Duty Cycle,
Unit Base RthJA °C/W
Single Pulse 0.01 Square Wave Pulse Duration (sec)
PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance Duty Cycle
0.05 0.02 Single Pulse 0.01
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
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Document Number: 71450 S-52554-Rev. 19-Dec-05
Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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N-Channel 40-V (D-S) MOSFET rDS(on) 0.009 0.012 FEATURES

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