Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si6423DQ_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 4.7899 29.1296 23.5780 62.5025 Ambient 19.0382 62.5773 17.7534 1.3155 Case Case Foot 1.2262 27.2251 8.9546 7.5941 Foot 3.1271 26.5913 261.4064 12.8334
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 70618 Revision: 27-Jun-07
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Si6423DQ_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 9.7836 30.2241 21.8202 58.1721 Ambient 7.1095 5.5597 75.4003 1.3626
Case Case
Foot 2.4659 13.4231 18.2549 10.8562 Foot 2.7247 6.2318 12.3432 125.2120
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 70618 Revision: 27-Jun-07
Si6423DQ_RC
Document Number: 70618 Revision: 27-Jun-07
www.vishay.com
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