Thermal Model Parameters DESCRIPTION parametric values thermal mo

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Thermal Model Parameters DESCRIPTION parametric values thermal mo

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Si1867DL_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 107.9039 114.0423 48.8709 49.1829 Ambient 12.6862 2.9378 272.5375 1.2036 Case Case Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 70496 Revision: 03-May-07
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Si1867DL_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 57.9066 108.0535 101.2811 52.7588 Ambient 218.5699 2.0012 4.7212 971.3538
Case Case
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 70496 Revision: 03-May-07
Si1867DL_RC
Document Number: 70496 Revision: 03-May-07
www.vishay.com

Thermal Model Parameters DESCRIPTION parametric values thermal mo

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