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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si1413EDH_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 56.6299 9.6987 27.5497 30.7656 Ambient 1.2585 292.8755 28.8786 2.4901 Case Case Foot 16.3442 5.8412 6.1172 16.6502 Foot 1.4474 165.7211 159.1680 4.0724
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 70491 Revision: 03-May-07
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Si1413EDH_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 11.7482 33.4099 24.3359 55.0458 Ambient 264.9457 1.9901 29.4999 1.2617
Case Case
Foot 9.3126 21.7163 8.4387 5.5442 Foot 170.4864 1.1574 1.9990 191.7478
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 70491 Revision: 03-May-07
Si1413EDH_RC
Document Number: 70491 Revision: 03-May-07
www.vishay.com

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