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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si7160DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 45.6539 7.7174 11.4750 5.1537 Ambient 1.4661 1.2845 85.7471 7.0752 Case 11.3553 990.8236 2.9804 517.4211 Case 204.0180 141.9402 16.8428 1.6025 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 70470 Revision: 03-May-07
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Si7160DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 5.1169 11.3311 11.9236 41.6284 Ambient 5.7096 51.1135 294.8715 1.1165
Case 748.4712 1.5396 1.2805 931.4288 Case 1.3840 15.9417 305.4512 28.6637
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 70470 Revision: 03-May-07
Si7160DP_RC
Document Number: 70470 Revision: 03-May-07
www.vishay.com

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