Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si5902BDC_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 57.3385 11.3186 22.2496 29.0933 Ambient 1.2687 256.3405 31.6376 1.7862 Case Case Foot 23.3961 5.5170 1.5526 9.5343 Foot 972.4869 171.7280 1.3394 13.1827
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 70469 Revision: 03-May-07
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Si5902BDC_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 11.3931 33.3620 19.5536 55.6913 Ambient 158.9536 1.3866 42.9674 1.2573
Case Case
Foot 9.1707 18.3070 10.3585 2.1638 Foot 162.5999 822.9837 4.4936 543.2878
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 70469 Revision: 03-May-07
Si5902BDC_RC
Document Number: 70469 Revision: 03-May-07
www.vishay.com
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