Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si4736BDY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 8.8494 28.5118 23.1989 29.5270 Ambient 4.7942 47.8504 1.7790 3.3023 Case Case Foot 2.8287 4.9971 12.5574 7.6168 Foot 2.1832 53.1425 107.8809 10.7557
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 70462 Revision 27-Apr-07
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Si4736BDY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 8.3728 28.2572 20.9669 32.4031 Ambient 3.4072 33.0178 696.0926 1.4436
Case Case
Foot 3.9889 10.7297 6.2299 7.0515 Foot 1.7140 7.2720 33.9809 156.5302
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 70462 Revision 27-Apr-07
Si4736BDY_RC
Document Number: 70462 Revision 27-Apr-07
www.vishay.com
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