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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si3401ADV_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 36.0525 9.8517 28.4261 45.6128 Ambient 6.3656 1.1443 108.4802 1.5662 Case Case Foot 47.2932 5.5793 7.2448 25.2245 Foot 1.1505 156.9101 126.9778 12.3844
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 70421 Revision 28-Mar-07
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Si3401ADV_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 10.5247 38.4735 28.0989 42.6345 Ambient 791.6697 4.6208 90.6722 1.4999
Case Case
Foot 10.2597 25.9158 27.1212 21.4310 Foot 236.7445 899.0379 125.2348 17.3426
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 70421 Revision 28-Mar-07
Si3401ADV_RC
Document Number: 70421 Revision 28-Mar-07
www.vishay.com

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