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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si7220DN_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 5.5116 15.7124 31.4633 40.9159 Ambient 840.4869 11.3700 55.2716 1.5421 Case 115.3842 2.6919 481.1246 2.2074 Case 17.0111 414.3368 2.6772 38.1607 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 70404 Revision 21-Mar-07
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Si7220DN_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 7.4204 26.2536 23.3417 36.6418 Ambient 895.2196 11.0236 90.8830 1.7052
Case 1.9795 839.9156 2.5754 1.9813 Case 4.1225 13.7519 45.4200 599.5286
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 70404 Revision 21-Mar-07
Si7220DN_RC
Document Number: 70404 Revision 21-Mar-07
www.vishay.com

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