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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si7686DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 8.5470 2.3159 13.0512 45.7415 Ambient 22.2343 737.1785 223.9436 1.5415 Case 13.5731 605.3055 1.6585 997.1349 Case 1.6850 769.3619 6.9296 5.4442 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 70395 Revision 21-Mar-07
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Si7686DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 4.0414 12.1369 16.2783 37.3369 Ambient 1.6382 33.1604 352.4092 1.5386
Case 72.1453 1.1499 1.2302 934.5156 Case 545.8376 171.5907 3.5582 1.3030
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 70395 Revision 21-Mar-07
Si7686DP_RC
Document Number: 70395 Revision 21-Mar-07
www.vishay.com

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