Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7119DN_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 3.4157 11.7653 13.8928 51.5234 Ambient 3.3338 16.2817 119.2454 1.1898 Case 6.0100 981.0845 1.3878 1.3986 Case 6.8637 654.2675 10.0287 9.4014 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 70389 Revision 19-Mar-07
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Si7119DN_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 5.1175 13.8380 14.0488 47.6157 Ambient 2.7199 12.6034 129.4695 1.1506
Case 1.3017 1.6966 635.2085 160.8853 Case 616.3492 4.7006 1.1258 3.4784
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 70389 Revision 19-Mar-07
Si7119DN_RC
Document Number: 70389 Revision 19-Mar-07
www.vishay.com
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