| |
Datasheet Home \ Datasheet Details
Download
PDF Abstract Text:
R-C Thermal Model Parameters
R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included.
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"1. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.
R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included.
Note:
For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C / W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 17.5692 12.4656 23.2860 56.8206 Ambient 35.3959 m 1.3321 m 65.8668 m 1.3693 Case N / A N / A N / A N / A Case N / A N / A N / A N / A Foot 9.2647 3.4067 8.9370 12.4282 Foot 5.9710 m 438.1076 u 31.5190 m 112.5386 m
Thermal Capacitance (Joules / °C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 70379 Revision 19-Mar-07
www.vishay.com 1
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C / W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4
Note: NA indicates not applicable
Ambient 12.4673 17.0606 25.3027 55.0685 Ambient 1.1231 m 14.8021 m 26.2850 m 1.3363
Foot 4.9164 14.0023 8.9519 6.1665 Foot 520.8355 u 5.5299 m 50.4017 m 73.0846 m
Thermal Capacitance (Joules / °C)
Reference: 1 "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
www.vishay.com 2
Document Number: 70379 Revision 19-Mar-07
Vishay Siliconix
Document Number: 70379 Revision 19-Mar-07
www.vishay.com 3
|