Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si4942DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 17.5692 12.4656 23.2860 56.8206 Ambient 35.3959 1.3321 65.8668 1.3693 Case Case Foot 9.2647 3.4067 8.9370 12.4282 Foot 5.9710 438.1076 31.5190 112.5386
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 70379 Revision 19-Mar-07
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Si4942DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 12.4673 17.0606 25.3027 55.0685 Ambient 1.1231 14.8021 26.2850 1.3363
Case Case
Foot 4.9164 14.0023 8.9519 6.1665 Foot 520.8355 5.5299 50.4017 73.0846
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 70379 Revision 19-Mar-07
Si4942DY_RC
Document Number: 70379 Revision 19-Mar-07
www.vishay.com
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