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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4872DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 15.1461 5.1118 23.4434 36.3248 Ambient 26.6995 6.0379 188.2129 2.2805 Case Case Foot 3.3876 5.6314 4.3819 7.6037 Foot 7.9366 53.3439 32.8583 286.7424
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 70369 Revision 19-Mar-07
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Si4872DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 11.1810 16.2396 20.9081 31.7403 Ambient 6.1678 30.9251 197.2340 2.3731
Case Case
Foot 2.6741 9.4665 4.4297 4.3503 Foot 3.3873 9.8076 122.9057 142.8755
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 70369 Revision 19-Mar-07
Si4872DY_RC
Document Number: 70369 Revision 19-Mar-07
www.vishay.com

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