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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4804BDY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 17.7264 2.6324 34.7338 54.4627 Ambient 4.9531 8.9425 45.8398 1.0431 Case Case Foot 15.7415 2.2019 15.5514 6.8595 Foot 4.7655 426.8169 105.9687 89.5748
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 70365 Revision 19-Mar-07
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Si4804BDY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 9.9712 21.3197 29.0574 49.2614 Ambient 2.2098 6.5082 61.9906 1.0971
Case Case
Foot 2.8820 18.2884 8.7076 10.4393 Foot 476.9172 4.1262 43.2595 69.3897
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 70365 Revision 19-Mar-07
Si4804BDY_RC
Document Number: 70365 Revision 19-Mar-07
www.vishay.com

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