Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si4488DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 13.5510 4.6916 19.8626 41.8404 Ambient 33.5652 9.4594 131.2610 1.7592 Case Case Foot 6.9236 1.0702 6.5044 6.5396 Foot 12.4807 1.8997 354.6357 70.1462
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 70358 Revision 19-Mar-07
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Si4488DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 6.0069 18.4914 15.9491 39.4210 Ambient 4.4507 23.2231 93.4185 1.7142
Case Case
Foot 1.5179 9.1863 5.2777 5.0728 Foot 1.7903 8.4123 65.8067 284.0581
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 70358 Revision 19-Mar-07
Si4488DY_RC
Document Number: 70358 Revision 19-Mar-07
www.vishay.com
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