Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si4486EY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 13.4389 5.1108 16.7765 48.9638 Ambient 61.3750 11.7026 171.8818 1.6999 Case Case Foot 6.3593 944.9503 3.3405 10.3749 Foot 15.0791 6.7469 877.7676 87.9996
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 70357 Revision 19-Mar-07
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Si4486EY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 7.2845 19.2687 14.1189 43.8469 Ambient 9.0889 32.1476 260.5862 1.5615
Case Case
Foot 1.8210 8.9210 8.2987 1.9465 Foot 3.5399 12.0117 100.2378 471.6705
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 70357 Revision 19-Mar-07
Si4486EY_RC
Document Number: 70357 Revision 19-Mar-07
www.vishay.com
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