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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4421DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 14.2349 4.4153 17.8876 48.0830 Ambient 42.4929 7.6568 193.7919 1.8737 Case Case Foot 6.4093 1.0103 3.3124 10.3332 Foot 12.7563 2.5875 1.0415 86.3581
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 70353 Revision 15-Mar-07
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Si4421DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 6.4995 19.1511 14.6602 44.2065 Ambient 6.3121 29.8721 207.2549 1.7204
Case Case
Foot 1.5997 8.7376 7.4005 3.2446 Foot 1.7132 11.7197 79.0140 373.3743
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 70353 Revision 15-Mar-07
Si4421DY_RC
Document Number: 70353 Revision 15-Mar-07
www.vishay.com

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