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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4472DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 17.0954 4.1009 10.2582 48.4891 Ambient 53.4040 10.7343 308.6263 1.7312 Case Case Foot 8.0750 985.2466 5.8266 6.0965 Foot 92.2555 11.2816 10.7945 310.4452
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 70348 Revision 19-Mar-07
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Si4472DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 3.1635 18.9943 12.4492 45.5480 Ambient 5.7989 27.2559 168.8211 1.5593
Case Case
Foot 2.6069 7.0439 10.0558 1.2480 Foot 3.9095 8.8827 89.4420 486.4044
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 70348 Revision 19-Mar-07
Si4472DY_RC
Document Number: 70348 Revision 19-Mar-07
www.vishay.com

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