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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si7852ADP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 9.3175 1.7290 6.4796 47.4739 Ambient 303.2258 3.0667 52.0372 1.3756 Case 467.3319 793.1223 656.8746 82.6712 Case 3.2992 20.4434 23.0380 2.5581 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69800 Revision: 22-Oct-07
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Si7852ADP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 4.0535 10.7203 18.7708 31.4554 Ambient 9.7862 68.9511 565.2801 1.5967
Case 422.3661 598.8721 970.7546 8.0072 Case 1.3980 2.9248 11.2432 108.3211
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 69800 Revision: 22-Oct-07
Si7852ADP_RC
Document Number: 69800 Revision: 22-Oct-07
www.vishay.com

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