Thermal Model Parameters DESCRIPTION parametric values thermal mo
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SUD50P08-25L_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 19.4441 1.6506 5.0732 13.8321 Ambient 1.6868 24.8303 361.6781 18.4117 Case 259.8443 237.0984 469.6874 133.3699 Case 31.6726 2.1850 69.8366 2.0158 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69778 Revision: 12-Oct-07
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SUD50P08-25L_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 1.9226 6.9952 20.0771 11.0051 Ambient 23.2658 266.8287 1.3332 19.6287
Case 347.3382 333.2429 245.6366 173.7823 Case 2.3954 31.7788 940.9257 1.0566
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 69778 Revision: 12-Oct-07
SUD50P08-25L_RC
Document Number: 69778 Revision: 12-Oct-07
www.vishay.com
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