Thermal Model Parameters DESCRIPTION parametric values thermal mo
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SiA443DJ_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 8.2427 18.6995 14.6088 38.4490 Ambient 190.9428 7.8958 544.9157 2.5805 Case 294.2544 2.0714 215.6456 5.5187 Case 34.7275 133.0633 156.1653 505.0581 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69754 Revision: 05-Oct-07
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SiA443DJ_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 7.7733 18.0803 15.8789 38.2675 Ambient 161.2678 6.0545 267.1137 1.9957
Case 3.2090 4.5690 259.5600 62.4400 Case 104.1400 488.8216 71.1095 13.6588
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 69754 Revision: 05-Oct-07
SiA443DJ_RC
Document Number: 69754 Revision: 05-Oct-07
www.vishay.com
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