Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7382DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 5.4616 28.3878 11.7135 24.4371 Ambient 16.1168 1.6140 143.0636 4.2526 Case 714.3163 588.1434 549.6898 447.8505 Case 32.2425 18.2091 1.8658 33.7309 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69748 Revision: 05-Oct-07
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Si7382DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 5.8205 11.2807 18.5270 34.3718 Ambient 12.8316 86.4012 649.8524 1.2416
Case 639.7950 338.8109 712.0410 609.3531 Case 1.5462 1.6200 8.2281 7.1342
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 69748 Revision: 05-Oct-07
Si7382DP_RC
Document Number: 69748 Revision: 05-Oct-07
www.vishay.com
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