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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si7326DN_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 6.3690 33.6842 15.3620 25.5848 Ambient 6.4281 3.9763 47.4607 1.3816 Case 1.7313 1.5591 1.2626 1.4470 Case 5.1735 5.7461 384.0234 22.7784 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69739 Revision: 02-Oct-07
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Si7326DN_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 6.9017 15.4608 29.2926 29.3449 Ambient 4.9012 34.9790 829.1860 2.4232
Case 907.8400 1.4099 2.8276 854.6600 Case 260.6296 591.0574 2.2795 25.4750
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 69739 Revision: 02-Oct-07
Si7326DN_RC
Document Number: 69739 Revision: 02-Oct-07
www.vishay.com

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