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R-C Thermal Model Parameters

R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included.

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R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"1. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.
R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included.
Note:
For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C / W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient N / A N / A N / A N / A Ambient N / A N / A N / A N / A Case 98.8249 m 700.0207 m 775.2444 m 725.9101 m Case 736.7067 m 849.7284 u 11.8190 m 66.5244 m Foot N / A N / A N / A N / A Foot N / A N / A N / A N / A
Thermal Capacitance (Joules / °C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 69650 Revision: 26-Sep-07
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R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C / W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4
Note: NA indicates not applicable
Case 836.5652 m 980.2511 m 473.6830 m 9.5007 m Case 791.3577 u 10.9168 m 88.1430 m 125.6128 m
Thermal Capacitance (Joules / °C)
Reference: 1 "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
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Document Number: 69650 Revision: 26-Sep-07
Vishay Siliconix
Document Number: 69650 Revision: 26-Sep-07
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