Thermal Model Parameters DESCRIPTION parametric values thermal mo
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SUP90N06-6m0P_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient Ambient Case 47.6767 19.4185 299.9507 182.9541 Case 19.2596 7.8658 171.3153 50.7447 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69630 Revision: 18-Sep-07
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SUP90N06-6m0P_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient Ambient
Case 109.0293 131.7538 116.8807 192.3362 Case 8.9025 32.1198 4.8889 207.3418
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 69630 Revision: 18-Sep-07
SUP90N06-6m0P_RC
Document Number: 69630 Revision: 18-Sep-07
www.vishay.com
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