Thermal Model Parameters DESCRIPTION parametric values thermal mo
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SUD50P04-13L_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 8.4163 16.0244 2.6000 22.9593 Ambient 129.7064 4.9650 7.4883 2.0514 Case 329.8317 825.6628 108.2953 336.2102 Case 4.8907 32.7799 1.6888 6.5927 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69626 Revision: 18-Sep-07
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SUD50P04-13L_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 2.0212 8.7293 14.5066 24.7429 Ambient 3.9946 78.9608 903.5859 1.2403
Case 557.3855 606.4934 168.1588 267.9623 Case 1.3749 7.9814 60.8182 35.1831
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 69626 Revision: 18-Sep-07
SUD50P04-13L_RC
Document Number: 69626 Revision: 18-Sep-07
www.vishay.com
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