Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si4382DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 22.7553 6.6718 21.2221 29.3508 Ambient 64.3358 14.4524 5.4099 1.4744 Case Case Foot 360.6000 4.6876 7.2429 3.7089 Foot 1.2259 14.2981 235.2821 56.6382
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69610 Revision: 10-Sep-07
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Si4382DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 3.6710 17.9933 14.2992 40.0365 Ambient 5.8549 25.7029 155.8266 1.3948
Case Case
Foot 475.8000 6.8763 3.3194 5.3285 Foot 2.6268 7.7709 51.5522 247.1054
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 69610 Revision: 10-Sep-07
Si4382DY_RC
Document Number: 69610 Revision: 10-Sep-07
www.vishay.com
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