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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4890BDY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 3.0243 26.4249 9.0631 51.4877 Ambient 2.2554 58.2479 18.2256 1.1849 Case Case Foot 9.2807 866.9000 8.3064 3.5460 Foot 18.3835 864.4181 124.5286 9.9325
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69558 Revision: 29-Aug-07
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Si4890BDY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 5.5804 16.0728 19.5561 48.7907 Ambient 2.4630 16.7370 52.6236 1.1788
Case Case
Foot 2.1226 10.7221 6.9736 2.1817 Foot 1.3322 7.1994 64.3286 101.9103
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 69558 Revision: 29-Aug-07
Si4890BDY_RC
Document Number: 69558 Revision: 29-Aug-07
www.vishay.com

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