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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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SUR50N025-09BP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 2.1648 6.2462 21.6551 19.9339 Ambient 15.7466 313.3210 1.2985 11.9580 Case 1.1106 263.1700 491.9700 334.2600 Case 16.6046 1.3048 288.6288 2.0611 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69541 Revision: 29-Aug-07
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SUR50N025-09BP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 2.2004 8.7070 22.5821 16.5105 Ambient 13.7731 207.4375 953.9426 12.0937
Case 312.9446 287.1098 1.1615 438.4456 Case 592.4308 665.9275 12.0177 272.4772
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 69541 Revision: 29-Aug-07
SUR50N025-09BP_RC
Document Number: 69541 Revision: 29-Aug-07
www.vishay.com

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