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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si7956DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 6.6533 32.0326 15.3419 30.9722 Ambient 6.7821 863.3517 63.7878 3.7755 Case 223.3622 890.5923 1.2467 339.3455 Case 1.2947 16.9595 1.8618 341.3828 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69519 Revision: 22-Aug-07
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Si7956DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 8.0282 17.2770 47.3643 12.3305 Ambient 5.8593 56.7408 732.3367 11.6894
Case 1.2164 928.4074 239.5384 315.6542 Case 933.5587 4.8497 87.6659 23.2998
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 69519 Revision: 22-Aug-07
Si7956DP_RC
Document Number: 69519 Revision: 22-Aug-07
www.vishay.com

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