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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4652DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 5.8414 20.6869 24.1966 34.2751 Ambient 10.8313 1.7695 48.3561 2.8676 Case Case Foot 6.8650 1.5343 5.4651 7.1356 Foot 11.7441 10.3888 556.0452 138.3595
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69511 Revision: 17-Aug-07
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Si4652DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 10.6784 22.0835 33.2621 18.9760 Ambient 10.7907 48.9692 1.0453 2.4536
Case Case
Foot 4.4388 4.2829 6.3940 5.8843 Foot 4.3434 9.1466 59.5960 284.0248
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 69511 Revision: 17-Aug-07
Si4652DY_RC
Document Number: 69511 Revision: 17-Aug-07
www.vishay.com

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