Thermal Model Parameters DESCRIPTION parametric values thermal mo
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SiE830DF_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 1.2715 7.4755 10.4814 48.7717 Ambient 2.1640 230.0674 42.6031 1.2991 Case Drain 541.9300 23.8824 959.1091 216.4667 Case Drain 45.8985 26.2866 18.2078 2.5292 Case Source 420.8703 2.9560 18.8355 4.2819 Case Source 1.1574 17.2324 853.1085 4.8476
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69508 Revision: 14-Aug-07
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SiE830DF_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 6.0874 7.6744 7.6389 46.5993 Ambient 11.6397 60.3507 17.0829 1.3018
Case Drain 310.0466 555.7670 52.0767 837.3209 Case Drain 2.0570 396.0260 16.5376 85.3684
Case Source 410.9662 1.2834 726.9760 978.6087 Case Source 952.9749 13.6830 1.2512 11.0678
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 69508 Revision: 14-Aug-07
SiE830DF_RC
Document Number: 69508 Revision: 14-Aug-07
www.vishay.com
SiE830DF_RC
www.vishay.com
Document Number: 69508 Revision: 14-Aug-07
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