Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si4102DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 10.9109 5.7578 20.0946 48.2367 Ambient 27.4871 972.2157 78.5434 1.3216 Case Case Foot 8.3851 3.0446 3.4945 11.0758 Foot 5.7116 371.7560 584.3406 79.9109
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69297 Revision: 13-Aug-07
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Si4102DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 6.9569 17.8674 14.4525 45.7232 Ambient 1.0544 21.6130 70.0102 1.3011
Case Case
Foot 3.4059 8.8403 7.8206 5.9332 Foot 362.1665 4.4996 50.6465 130.1162
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 69297 Revision: 13-Aug-07
Si4102DY_RC
Document Number: 69297 Revision: 13-Aug-07
www.vishay.com
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