Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si3410DV_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 6.2695 16.7742 35.9808 50.9755 Ambient 1.4694 8.2363 16.9825 1.2106 Case Case Foot 8.8965 2.1366 15.5596 3.4073 Foot 34.9849 338.1620 3.2953 66.2415
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69295 Revision: 13-Aug-07
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Si3410DV_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 4.5899 24.7140 30.5096 50.1865 Ambient 374.6423 3.7124 11.1222 1.2012
Case Case
Foot 2.2919 17.9875 9.3016 419.0000 Foot 218.9882 2.6589 17.9020 4.7293
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 69295 Revision: 13-Aug-07
Si3410DV_RC
Document Number: 69295 Revision: 13-Aug-07
www.vishay.com
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