Download

PDF Abstract Text:

R-C Thermal Model Parameters

R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included.

Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"1. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.
R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included.
Note:
For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C / W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 51.8371 32.9815 20.4166 14.7648 Ambient 1.2938 46.6122 m 4.1098 m 6.6628 m Case N / A N / A N / A N / A Case N / A N / A N / A N / A Foot 3.0368 17.7874 391.9596 m 783.8404 m Foot 16.7404 m 2.4901 m 306.5161 m 235.5190 u
Thermal Capacitance (Joules / °C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 69283 Revision: 10-Aug-07
www.vishay.com 1
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C / W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4
Note: NA indicates not applicable
Ambient 36.8615 18.1056 20.4094 44.6235 Ambient 2.3438 m 25.9526 m 117.6861 m 1.4677
Foot 1.5772 19.3310 962.6364 m 129.1636 m Foot 674.5841 u 1.5358 m 2.7859 m 51.7135 m
Thermal Capacitance (Joules / °C)
Reference: 1 "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
www.vishay.com 2
Document Number: 69283 Revision: 10-Aug-07
Vishay Siliconix
Document Number: 69283 Revision: 10-Aug-07
www.vishay.com 3