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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si8902EDB_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 51.8371 32.9815 20.4166 14.7648 Ambient 1.2938 46.6122 4.1098 6.6628 Case Case Foot 3.0368 17.7874 391.9596 783.8404 Foot 16.7404 2.4901 306.5161 235.5190
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69283 Revision: 10-Aug-07
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Si8902EDB_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 36.8615 18.1056 20.4094 44.6235 Ambient 2.3438 25.9526 117.6861 1.4677
Case Case
Foot 1.5772 19.3310 962.6364 129.1636 Foot 674.5841 1.5358 2.7859 51.7135
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 69283 Revision: 10-Aug-07
Si8902EDB_RC
Document Number: 69283 Revision: 10-Aug-07
www.vishay.com

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