Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7911DN_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 4.2936 55.8743 15.4872 18.3449 Ambient 318.3123 1.2061 4.2755 62.7584 Case 2.9497 809.4894 781.2106 2.4596 Case 1.2334 209.2824 208.6266 907.7280 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69271 Revision: 08-Aug-07
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Si7911DN_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 5.4867 16.2228 18.1219 54.1686 Ambient 346.4206 3.8989 57.7878 1.1690
Case 2.6633 3.6753 573.3920 88.0080 Case 201.9115 700.0748 315.3981 12.3600
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 69271 Revision: 08-Aug-07
Si7911DN_RC
Document Number: 69271 Revision: 08-Aug-07
www.vishay.com
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