Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7909DN_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 10.0659 56.5917 16.2226 11.1198 Ambient 567.6399 1.5867 11.1549 265.4022 Case 1.7654 917.0038 513.4962 1.8041 Case 2.2536 381.7385 378.3022 1.5575 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69270 Revision: 08-Aug-07
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Si7909DN_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 12.7969 16.8918 13.9897 50.3216 Ambient 624.3994 15.4313 335.4291 1.4071
Case 1.8167 2.6797 415.3083 88.2917 Case 269.9786 969.6215 388.3320 11.3066
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 69270 Revision: 08-Aug-07
Si7909DN_RC
Document Number: 69270 Revision: 08-Aug-07
www.vishay.com
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