Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7864ADP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 9.2083 1.4903 8.7622 45.5392 Ambient 798.5995 9.7434 61.6872 1.5612 Case 73.5297 481.0169 442.7555 502.6979 Case 95.9006 32.1985 10.4753 35.3560 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69267 Revision: 03-Aug-07
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Si7864ADP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 6.6273 7.6686 8.2492 42.4549 Ambient 22.4225 128.1298 252.4112 1.1389
Case 70.5542 644.8877 259.7859 524.7722 Case 439.8910 5.0258 10.1882 67.4933
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 69267 Revision: 03-Aug-07
Si7864ADP_RC
Document Number: 69267 Revision: 03-Aug-07
www.vishay.com
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