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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si7860DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 37.4121 11.9075 17.7112 2.9692 Ambient 2.2919 69.9170 1.2812 10.8719 Case 456.8056 594.2164 243.1780 1.0058 Case 1.8736 15.1576 19.6083 24.0739 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69265 Revision: 06-Aug-07
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Si7860DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 3.7073 11.9067 26.3342 28.0518 Ambient 8.4590 50.6640 617.4415 1.8369
Case 677.6259 648.3863 485.5114 488.4764 Case 1.4523 4.0094 7.7628 24.6477
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 69265 Revision: 06-Aug-07
Si7860DP_RC
Document Number: 69265 Revision: 06-Aug-07
www.vishay.com

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