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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si7900AEDN_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 50.0561 8.0193 16.4056 7.5190 Ambient 1.1948 244.3604 24.6227 1.5132 Case 1.1474 471.8341 84.2659 1.0965 Case 2.6930 237.5765 342.1648 9.8213 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69263 Revision: 03-Aug-07
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Si7900AEDN_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 10.6302 17.7042 10.6309 43.0347 Ambient 1.8614 26.5692 386.3206 958.5463
Case 627.0838 879.7710 732.0903 561.0549 Case 240.7838 2.0999 333.7959 13.8461
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 69263 Revision: 03-Aug-07
Si7900AEDN_RC
Document Number: 69263 Revision: 03-Aug-07
www.vishay.com

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