Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7882DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 37.5406 8.7467 14.9130 3.7997 Ambient 2.9744 117.6821 1.3856 10.8596 Case 954.6352 703.5545 689.0641 252.7462 Case 14.6593 4.4760 22.1687 775.9059 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69261 Revision: 03-Aug-07
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Si7882DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 3.0658 10.4107 25.2676 26.2559 Ambient 7.1561 66.7709 797.2794 3.0054
Case 209.6948 462.6679 952.7478 974.8895 Case 416.0910 918.7820 2.5888 8.2583
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 69261 Revision: 03-Aug-07
Si7882DP_RC
Document Number: 69261 Revision: 03-Aug-07
www.vishay.com
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