Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7850DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 38.0892 11.9509 16.5855 3.3744 Ambient 2.9657 80.2022 1.6284 6.1301 Case 474.6433 941.4114 387.3453 1.4966 Case 4.1589 24.3979 856.3778 10.8891 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69250 Revision: 27-Jul-07
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Si7850DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 4.0491 12.1788 26.8249 26.9472 Ambient 6.0977 66.9257 851.4193 2.5650
Case 934.3838 873.1369 651.6876 840.7917 Case 756.8308 6.2204 554.0729 1.3454
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 69250 Revision: 27-Jul-07
Si7850DP_RC
Document Number: 69250 Revision: 27-Jul-07
www.vishay.com
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