Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7846DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 37.8692 9.6760 13.7447 3.7101 Ambient 2.4398 109.5160 1.2150 13.5111 Case 538.6494 309.2872 519.9868 432.0766 Case 56.0952 3.5975 58.1325 191.0312 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69249 Revision: 27-Jul-07
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Si7846DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 3.4764 11.8449 24.7925 24.8862 Ambient 8.4494 70.6034 738.6042 2.5610
Case 387.5324 496.4702 524.5205 391.4769 Case 3.2046 18.4166 13.1656 21.9067
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 69249 Revision: 27-Jul-07
Si7846DP_RC
Document Number: 69249 Revision: 27-Jul-07
www.vishay.com
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