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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si7844DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 55.1947 11.1866 13.1709 5.4478 Ambient 1.4037 21.2313 284.3546 1.0248 Case 1.3251 1.7811 949.5000 1.4443 Case 632.5614 2.1004 817.4728 13.4950 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69248 Revision: 27-Jul-07
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Si7844DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 6.7017 13.1135 16.5834 48.6014 Ambient 1.1322 22.6418 284.4815 1.2592
Case 1.7943 2.0703 823.2986 812.1014 Case 417.8669 1.6506 31.7564 926.1856
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 69248 Revision: 27-Jul-07
Si7844DP_RC
Document Number: 69248 Revision: 27-Jul-07
www.vishay.com

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