Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7842DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 3.8469 58.7111 9.8691 12.5729 Ambient 855.9025 1.1754 13.1731 153.1105 Case 2.1732 318.4000 1.2858 1.7226 Case 886.1880 1.1971 178.0317 5.8008 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69247 Revision: 27-Jul-07
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Si7842DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 5.3327 9.7206 14.7308 55.2159 Ambient 1.0226 13.6581 115.3568 1.1313
Case 2.5694 1.8054 968.9591 156.2409 Case 513.9886 4.2921 220.1830 1.7553
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 69247 Revision: 27-Jul-07
Si7842DP_RC
Document Number: 69247 Revision: 27-Jul-07
www.vishay.com
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